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镁掺杂对ZnO薄膜光诱导亲水性的影响
引用本文:黄凯,吕建国,张莉,唐震,余江应,李平,刘峰.镁掺杂对ZnO薄膜光诱导亲水性的影响[J].半导体学报,2012,33(5):053003-5.
作者姓名:黄凯  吕建国  张莉  唐震  余江应  李平  刘峰
作者单位:安徽建筑工业学院数理系
基金项目:国家自然科学基金;省自然科学基金
摘    要:采用溶胶-凝胶法在Si(111)制备了一系列Mg掺杂的ZnO薄膜。用X射线衍射仪、原子力显微镜和接触角测试仪测量薄膜的微结构、表面形貌和表面接触角。结果表明:Mg掺杂ZnO薄膜仍为六角纤锌矿型结构,所有薄膜均具有较好的c轴择优取向。随着Mg掺杂含量的增加,薄膜的粗超度从2.14nm增大到9.56nm,薄膜表面接触角由89? 减小到 82?。通过对薄膜交替进行紫外光照和黑暗放置(或热处理),可以实现其表面疏水与超亲水性之间的可逆转化,光诱导可逆转化效率随Mg掺杂含量的增加而增大。

关 键 词:ZnO薄膜  光致亲水性  镁掺杂  Si(111)  水接触角  原子力显微镜  石英衬底  微观结构

Effect of magnesium doping on the light-induced hydrophilicity of ZnO thin films
Huang Kai,Lu Jianguo,Zhang Li,Tang Zhen,Yu Jiangying,Li Ping,and Liu Feng.Effect of magnesium doping on the light-induced hydrophilicity of ZnO thin films[J].Chinese Journal of Semiconductors,2012,33(5):053003-5.
Authors:Huang Kai  Lu Jianguo  Zhang Li  Tang Zhen  Yu Jiangying  Li Ping  and Liu Feng
Affiliation:Department of Mathematics and Physics, Anhui University of Architecture, Hefei 230601, China;Electronics and Information Engineering, Hefei Normal University, Hefei 230601, China;Department of Mathematics and Physics, Anhui University of Architecture, Hefei 230601, China;Department of Mathematics and Physics, Anhui University of Architecture, Hefei 230601, China;Department of Mathematics and Physics, Anhui University of Architecture, Hefei 230601, China;Department of Mathematics and Physics, Anhui University of Architecture, Hefei 230601, China;Schoolof Mathematics and Physics, Anhui Polytechnic University, Wuhu 241000, China
Abstract:Undoped and Mg-doped ZnO thin films were deposited on Si (111) and quartz substrates by using the sol-gel method. Microstructure, surface topography and water contact angle of the thin films have been measured by X-ray diffraction (XRD), an atomic force microscope (AFM) and water contact angle apparatus, respectively. The XRD results show that all the thin films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. With the increase of Mg concentration, the RMS roughness increases from 2.14 to 9.56 nm and the contact angle of the un-irradiated thin films decreases from 89° to 82°. The wetting behavior of the resulting films can be reversibly switched from hydrophobic to hydrophilic, through alternation of UV illumination and dark storage. The light-induced efficiency of the thin films increases with the increase of Mg concentration.
Keywords:ZnO  sol-gel  Surface topography  hydrophilicity
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