Growth rate and surface microstructure in α(6H)–SiC thin films grown by chemical vapor deposition |
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Authors: | Y C Wang R F Davis |
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Affiliation: | (1) Department of Materials Science and Engineering, North Carolina State University, 27695 Raleigh, NC |
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Abstract: | Monocrystalline 6H-SiC thin films have been epitaxially grown on off-axis 6H-SiC {0001} substrates in the temperature range
of 1623–1873 K via chemical vapor deposition. The growth rate was a strong function of the growth temperature and the reactant
gas concentration. The activation energies for growth were 64 kJ/mole and 55 kJ/mole for the (0001) Si face and the (0001)
C face, respectively. The concentration of growth pits in the films increased as a function of decreasing deposition temperature,
increasing concentration of reactant gases and increasing off-axis orientation. Beta-SiC islands were also observed in the
epilayers when the (SiH4 + C2H4)/H2 ratio was ≥2.5:3000. |
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Keywords: | α (6H)-SiC thin film CVD growth rate surface microstructure |
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