Nanostructure effect of V2O5 buffer layer on performance of polymer-fullerene devices |
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Authors: | Cheng Gong Hong Bin YangQun Liang Song Chang Ming Li |
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Affiliation: | a School of Chemical and Biomedical Engineering and Center for Advanced Bionanosystems, Nanyang Technological University, 70 Nanyang Drive, Singapore 637457, Singapore b Institute for Clean Energy & Advanced Materials, Southwest University, Chongqing 400715, PR China |
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Abstract: | Nanostructure of solar cell materials is often essential for the device performance. V2O5 nanobelt structure is synthesized with a solution process and further used as an anode buffer layer in polymer solar cells, resulting insignificantly improved power conversion efficiency (PCE of 2.71%) much higher than that of devices without the buffer layer (PCE of 0.14%) or with V2O5 powder as the buffer layer (1.08%). X-ray diffraction (XRD) results indicate that the V2O5 nanobelt structure has better phase separation while providing higher surface area for the P3HT:PCBM active layer to enhance photocurrent. The measured impedance spectrums show that the V2O5 nanobelt structure has faster charge transport than the powder material. This work clearly demonstrates that V2O5 nanobelt has great potential as a substitute of the conventionally used PEDOT-PSS buffer layer for high performance devices. |
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Keywords: | Nanostructure Polymer solar cell V2O5 nanobelt |
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