Engineering of charge transport materials for universal low optimum doping concentration in phosphorescent organic light-emitting diodes

A universal low optimum doping concentration of below 5% was demonstrated in phosphorescent organic light-emitting diodes (PHOLEDs) by managing the energy levels of charge transport materials. The device performances of PHOLEDs could be optimized at a low doping concentration of 3% irrespective of the host material in the emitting layer. The suppression of charge trapping and hopping by the dopant through charge transport layer engineering optimized the device performance at low doping concentration. In addition, it was revealed that PHOLEDs with low optimum doping concentration show better quantum efficiency, low efficiency roll-off and low doping concentration dependency of the device performance.