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Characterization of crystallographic properties of SMC poly Si using electron backscattered diffraction |
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| Authors: | D-I KIM K H OH H-C LEE Y J CHANG†‡ W S SOHN† & J JANG† |
| Affiliation: | School of Materials Science &Engineering, Seoul National University ENG445, San 56-1, Shilim-dong, Kwanak-ku, Seoul 151-744, Korea; Advanced Display Research Center and Department of Information Display, Kyung Hee University, Seoul 130-701, Korea; Mobile Product Engineering Group, AMLCD Division, Samsung Electronics, Kiheung, Korea |
| Abstract: | Crystallographic properties of silicide mediated crystallization (SMC) polycrystalline silicon (poly Si) and excimer laser annealing (ELA) poly Si were studied by electron backscattered diffraction. Large‐grain sized poly Si with a large fraction of low‐angle grain boundaries was acquired by SMC, and small‐grain sized poly Si with high‐angle grain boundaries especially around 60° was acquired by ELA. The thin film transistor (TFT) device characteristics were investigated in view of short‐range crystallinity (pattern quality) and long‐range crystallinity (misorientation distribution) of the specimens. Short‐range crystallinity did not significantly affect the TFT device characteristics, and long‐range crystallinity considering the low energy level of special boundaries could be better related to the TFT device characteristics of poly Si. |
| Keywords: | CSL device characteristics EBSD ELA grain boundary energy misorientation pattern quality poly Si pseudo Kikuchi pattern SMC TFT crystallinity |