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基于标准CMOS工艺的一款宽带限幅放大器芯片设计
引用本文:王伟明,杨涛,高铭坤,王云峰,郭东辉. 基于标准CMOS工艺的一款宽带限幅放大器芯片设计[J]. 中国集成电路, 2009, 18(1): 29-33,48
作者姓名:王伟明  杨涛  高铭坤  王云峰  郭东辉
作者单位:1. 厦门大学物理系,福建,厦门,361005
2. 厦门大学电工系,福建,厦门,361005
3. 厦门大学物理系,福建,厦门,361005;厦门大学电工系,福建,厦门,361005;厦门睿智微电子技术有限公司,福建,厦门,361005
基金项目:国家教育部新世纪人才计划项目,国家自然科学基金,福建省科技项目的联合资助项目 
摘    要:采用SMIC 0.35μm CMOS混合信号工艺来设计开发一款适用于SDH STM-16的光接收机前端限幅放大器芯片。该限幅放大器的设计采用了电容中和技术来实现带宽的扩展,可满足2.5Gbps速率要求,芯片电路拥有信号丢失检测和自动静噪功能。芯片版图的参数提取仿真表明:芯片最小输入动态范围可达2mV,50Ω负载上的双端输出摆幅约为1400mVpp在3.3V供电下静态功耗仅为66mW,动态功耗为105mW,有实际推广价值。

关 键 词:限幅放大器  电容中和  CMOS工艺

A Wideband Limiting Amplifier design of Basing on CMOS Technics
WANG Wei-ming,YANG Tao,GAO Ming-kun,WANG Yun-feng,GUO Don-hui. A Wideband Limiting Amplifier design of Basing on CMOS Technics[J]. China Integrated Circuit, 2009, 18(1): 29-33,48
Authors:WANG Wei-ming  YANG Tao  GAO Ming-kun  WANG Yun-feng  GUO Don-hui
Affiliation:WANG Wei-ming, YANG Tao, GAO Ming-kun, WANG Yun-feng, GUO Don-hui(1.Department of Physis,Xiamen University, Xiamen 361005, China;2. Department of Electronic Engineering ,Xiamen University, Xiamen 361005, China;3 Xiamen Rich IT Microelectronic Technologies LTD, Xiamen 361005,china)
Abstract:A 2.5Gbps limiting amplifier was realized in SMIC 0.35 μm CMOS mixed signal process for optical receiver' s front end. This limiting amplifier uses capacitance neutralization technology to improve bandwidth and can satisfy 2.5 Gbps requirement for SDH STM-16 system. The chip also includes detecting lost signals and automatic squelch module. The post-simulation results show that this chip offers an input dynamic range as small as 2 mV, and provides a constant double-end output of 1.4 Vpp over a 50 Ω load. The static power dissipation is only 66 mW and dynamic power dissipation is 105 mW with the supply voltage of 3.3 V.
Keywords:limiting amplifier  capacitance neutralization  CMOS technology  
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