Rapid thermal oxidation of silicon for thin gate dielectric |
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| Authors: | Tung N. Chan Caratini Y. |
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| Affiliation: | Centre National d'Etudes des Télécommunications, Meylan, France; |
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| Abstract: | Rapid thermal oxidation of silicon has been carried out in the temperature range 1000 to 1250°C for an oxidation time of 5 to 60 s. The new kinetics data show that oxidation is carried out by a two-energy activation process. Assuming linear growth during the first 5 s of fast oxidation, the first process occurs with an activation energy Ea of 0.9 eV. The second process takes place with Ea = 1.4 eV for linear growth kinetics from 5 to 60 s. |
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