| 离子注入法制备NiSi2层及其表面等离激元增强ZnO紫外发射的研究 |
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| 引用本文： | 谭海仁,游经碧,张曙光,高红丽,尹志岗,白一鸣,张秀兰,张兴旺,屈盛.离子注入法制备NiSi2层及其表面等离激元增强ZnO紫外发射的研究[J].半导体学报,2011,32(10):102002-4. |
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| 作者姓名： | 谭海仁 游经碧 张曙光 高红丽 尹志岗 白一鸣 张秀兰 张兴旺 屈盛 |
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| 作者单位： | 中国科学院半导体研究所半导体材料科学重点实验室,中国科学院半导体研究所半导体材料科学重点实验室,中国科学院半导体研究所半导体材料科学重点实验室,中国科学院半导体研究所半导体材料科学重点实验室,中国科学院半导体研究所半导体材料科学重点实验室,中国科学院半导体研究所半导体材料科学重点实验室,中国科学院半导体研究所半导体材料科学重点实验室,中国科学院半导体研究所半导体材料科学重点实验室,欧贝黎新能源科技股份有限公司 |
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| 基金项目： | Project supported by the National Natural Science Foundation of China (No. 61076051) and the Beijing Natural Science Foundation (No. 2102042). |
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| 摘 要： | 通过对NiSi2的表面等离激元共振能量和ZnO/NiSi2的Purcell因子的计算,结果表明可以利用NiSi2与ZnO之间的表面等离激元耦合效应来增强ZnO的紫外发射。实验中,ZnO薄膜直接沉积在NiSi2层上,其中NiSi2层通过Ni离子注入的方法获得,并且其表面粗糙度可在3 nm到38 nm的大范围内调节,为研究表面等离激元增强ZnO紫外发射创造了有利的实验条件。在最粗糙的NiSi2层上制备的ZnO,其紫外发射获得了11倍的增强。本文的实验结果表明,NiSi2有望应用在电互联材料的同时,还可以用其来增强半导体的光发射。
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| 关 键 词： | 氧化锌薄膜 表面等离激元 二硅化镍 光致发光 |
| 收稿时间： | 4/15/2011 4:02:28 PM |
| 修稿时间： | 5/4/2011 5:56:43 PM |
Enhancement of ZnO ultraviolet emission by surface plasmon coupling using a rough NiSi2 layer synthesized by ion implantation |
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| Tan Hairen,You Jingbi,Zhang Shuguang,Gao Hongli,Yin Zhigang,Bai Yiming,Zhang Xiulan,Zhang Xingwang and Qu Sheng.Enhancement of ZnO ultraviolet emission by surface plasmon coupling using a rough NiSi2 layer synthesized by ion implantation[J].Chinese Journal of Semiconductors,2011,32(10):102002-4. |
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| Authors: | Tan Hairen You Jingbi Zhang Shuguang Gao Hongli Yin Zhigang Bai Yiming Zhang Xiulan Zhang Xingwang and Qu Sheng |
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| Affiliation: | Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Eoplly New Energy Technology Co. Ltd., Haian 226612, China |
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| Abstract: | The calculation results of the surface plasmon (SP) energy and Purcell factor of ZnO/NiSi2 demonstrate the possibility of using NiSi2 to enhance the UV emission of ZnO by SP coupling. Experimentally, ZnO films were deposited on NiSi2 layers synthesized by ion implantation, and the roughness of the NiSi2 layers spans a large range from 3 to 38 nm, providing favorable conditions for investigating SP-mediated emission. An 11-fold emission enhancement from the ZnO film on the roughest NiSi2 layer was obtained, which indicates the possibility that metal silicide layers can be used both as an electrical contact and for emission enhancement. |
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| Keywords: | ZnO film surface plasmon NiSi2 photoluminescence |
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