宽频带毫米波匹配型PIN衰减器

本文采用有向图理论分析了匹配型多管阵PIN衰减器。直接从电网络的有向图中求得电调衰减器的衰减特性和驻波特性。对玻璃钝化无封装棒状型PIN管进行了研究。在较高的微波频率上,所使用的无封装二极管装入微波电路引起的寄生电抗,其重要性显著增加。极端情况下,这些寄生电抗将确定电路工作频率的上限。然而,这个上限频率尚未清楚;为此,本文采用某些独特的技术,将匹配型PIN衰减器的工作频率扩展到毫米波频段。文中给出了五管匹配型PIN衰减器产品的典型性能。工作带宽为26.5—40千兆赫,零偏插损和零偏下的电压驻波系数分别小于1分贝和1.4。衰减量的动态范围大于25分贝,动态衰减下的最大电压驻波系数小于1.4。

Broadband mm-Wave Matched PIN Attenuator

A matched PIN-attenuator for an array of diodes is analysed using the theory of oriented graph. Attenuation and v. s. w. r. as functions of frequency for the matched PlN-attenuator is obtained directly from the oriented graph of the electrical networks. The use of the glass passivated unencapsulated PIN diodes is investigated. Although an unencapsulated diodes is used, parasitic reactances have increased at higher microwave frequencies when the diode is mounted in its microwave circuit. Finally, it is suggested that these reactances will determine the practical upper frequency limit of operation. However, it is not yet clear where this upper limit might be, and the purpose of this paper is to deseribe an investigation of extending the operation of matched PIN-attenuator within mm-wave frequency band using some unique techniques. The typical performances of the matched PIN-attenuator products are : for 26.5-40GHz (Q-band) frequency range, the insertion loss and v. s. w. r. of zero-bias are less than IdB and 1.4 respectively. The attenuation amounts to more than 25dB with v. s. w. r. not greater than 1.4 over the entire bandwidth.