内置驱动器的六位GaAs PHEMT宽带单片数控衰减器

采用增强/耗尽型(E/D)结构的赝配高电子迁移率晶体管(PHEMT)技术,研制开发的砷化镓MMIC单片六位数字控制衰减器,具有衰减精度准确、承受功率大、线性度高等特点,并且集成了驱动器,使得输入信号控制线减少了一半,大大减少了系统布线的难度。产品由GaAsPHEMT标准工艺线加工。测试结果表明,在0.05～3.0GHz带内,插入损耗≤2.3dB@3GHz,带内输入输出驻波比≤1.5,衰减精度在±(0.3dB+3%)以内,1dB压缩功率点达到了27dBm,IP3超过了+45dBm。

Six bit GaAs PHEMT Broad Band Digital Attenuator MMIC Comprising TTL Driver

GaAs MMIC 6 bit digital attenuator product has been designed using new PHEMT technology including enhancement/depletion FET.This product makes a feature of accurate at-tenuation,high linearity,high power capability,and integrates inverter driver,on the other hand it can halve quantity of control lines and simplify layout of communication systems.This product is fabricated by GaAs PHEMT standard foundry.The measurement results are as follows in 0.05～3.0 GHz frequency range,insertion loss≤2.3 dB@3GHz,VSWR≤1.5,attenuation accuracy ≤±(0.3 dB+3%),P-1≥27 dBm,IP3≥+45 dBm.