| TFSOI RESURF功率器件表面电场分布和优化设计的新解析模型 |
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| 引用本文： | 何进,张兴,黄如,王阳元. TFSOI RESURF功率器件表面电场分布和优化设计的新解析模型[J]. 半导体学报, 2001, 22(4) |
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| 作者姓名： | 何进 张兴 黄如 王阳元 |
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| 作者单位： | 北京大学微电子学研究所, |
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| 基金项目： | 国家重点基础研究发展计划(973计划) |
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| 摘 要： | 提出了TFSOI RESURF功率器件的表面电场分布和优化设计的新解析模型．根据二维泊松方程的求解，得到了表面电场和电势分布的相关解析表达式．在此基础上，推出了为获得最大击穿电压的优化条件。讨论了击穿电压和漂移区长度及临界掺杂浓度和场氧化层、埋氧化层的关系．解析结果与半导体器件数值分析工具DESSISE-ISE得到的数值分析基本一致，证明了新解析模型的适用性．
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| 关 键 词： | TFSOI RESURF器件 表面电场分布 电势分布 击穿电压 优化设计 |
A Novel Analytical Model for Surface Electrical Field Distribution and Optimization of TFSOI RESURF Devices |
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| HE Jin,ZHANG Xing,HUANG Ru,WANG Yang-Yuan. A Novel Analytical Model for Surface Electrical Field Distribution and Optimization of TFSOI RESURF Devices[J]. Chinese Journal of Semiconductors, 2001, 22(4) |
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| Authors: | HE Jin ZHANG Xing HUANG Ru WANG Yang-Yuan |
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| Abstract: | A novel analytical model for the thin film silicon on insulator (TFSOI) reduced surface field (RESURF) devices has been proposed.Based on the 2-D Poisson equation solution,the analytical expressions for the surface potential and field distributions are derived.From this analysis,the optimum design condition for the maximum breakdown voltage is obtained.The dependence of the maximum breakdown voltage on the drift region length is examined and the relationship between the critical doping concentration and the front- and back- interface oxide layer thickness is discussed.The numerical simulation performed by the advanced semiconductor simulation tool,DESSIS-ISE,has been shown to support the analytical results. |
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