一种硅微多传感器集成研究

为满足小体积、多参数测量的要求,利用(100)晶面的各向异性压阻特性与MEMS加工工艺特性,在单芯片上集成制作了三轴加速度、绝对压力以及温度等硅微传感器,在结构和检测电路设计上最大限度地减小各传感器之间的相互干扰影响。三轴加速度、绝对压力传感器利用压阻效应导致的电阻变化测量外界加速度和压力变化量,温度传感器利用掺杂单晶硅电阻率随温度变化的原理来测量外界温度。集成传感器具有较好的工艺兼容性,加速度、压力传感器的压敏电阻和温度传感器的测温电阻采用硼离子掺杂制作,加速度和压力传感器设计成工艺兼容的体硅结构。研制的集成传感器芯片尺寸为4mm×6mm×0.9mm。给出了集成传感器的性能测试结果。

The Research of a Micro-silicon Integrated Multi-sensor*

A micro-silicon integrated multi-sensor including three-axis accelerometers, an absolute pressure sensor and a temperature sensor is described in this paper. The purpose application of the integrated sensor meets the demands of little volume and multi parameters. The interference between each other sensor is eliminated because of the design of the integrated structure and the detected circuit. The three axis accelerometers and absolute pressure sensor use a bulk micromachined diaphragm structure with piezoresistors. For temperature sensing, a silicon temperature sensor is fabricated based on the spreading resistance principle. The size of the integrated multi-sensor is 4mm×6mm×0.9mm. The test results of the integrated sensor are shown.