超声雾化喷涂工艺及优质二氧化锡透明导电薄膜的研究

报道了采用超声雾化喷涂工艺沉积优质掺杂二氧化锡透明导电半导体薄膜的实验成果 ,选用氟作为掺杂元素 ,通过改变掺杂量和工艺参数 ,可控制薄膜的方块电阻在 1 0 Ω/□以上的范围内变化 (40 0 nm膜厚 ) ,掺氟离子二氧化锡为 n型导电半导体 ,高浓度掺杂的二氧化锡薄膜光学透过率为 87%～ 90 % (采用 550 nm单色光源测透过率 )。用 X射线衍射及扫描电子显微镜分析 ,可获得该薄膜材料的微结构、表面形貌以及薄膜组成、掺杂百分含量。该成果为大规模生产优质二氧化锡透明导电薄膜 ,提供了有效、简单的方法和装置。

Ultrasonic Enhanced Spraying Process and Study of Tin Oxide Transparent Conductive Thin Films

Transparent conductive tin oxide thin films doped with fluorine ions are deposited with the spraying method by use of ultrasonic wave atomizer. The sheet resistance of the films can be controlled by changing doping amount of F ions and choosing appropriate process conditions and its minimum value is 10 Ω/□ (400 nm thickness). The film is n type semiconductor. The transparence of the SnO 2 films is in the range from 90% to 85% measured by the 550 nm wavelength light.X ray diffraction and SEM images analyses demonstrate that the films have a high quality of crystallization with optimized orientation. The composition of the films is analysed by EDAX.This work offers a simple effective method and apparatus to manufacture transparent conductive tin oxide thin films with large scale production.