| 不同沟道宽长比有机薄膜晶体管性能的研究 |
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| 引用本文： | 严剑飞,吴志明,太惠玲,李娴,付嵩琦.不同沟道宽长比有机薄膜晶体管性能的研究[J].半导体光电,2011,32(1):52-55,108. |
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| 作者姓名： | 严剑飞 吴志明 太惠玲 李娴 付嵩琦 |
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| 作者单位： | 电子科技大学光电信息学院电子薄膜与集成器件国家重点实验室,成都,610054;电子科技大学光电信息学院电子薄膜与集成器件国家重点实验室,成都,610054;电子科技大学光电信息学院电子薄膜与集成器件国家重点实验室,成都,610054;电子科技大学光电信息学院电子薄膜与集成器件国家重点实验室,成都,610054;电子科技大学光电信息学院电子薄膜与集成器件国家重点实验室,成都,610054 |
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| 摘 要： | 以酞菁铜为有源层,二氧化硅为绝缘层,钛/金作为电极,制作了三种不同沟道宽长比的有机薄膜晶体管器件。通过对这三种器件的电学特性进行对比,分析了不同沟道宽长比对器件电学性能的影响。结果表明,沟道宽长比对器件的迁移率影响很小,阈值电压随着宽长比的增大而减小,漏电流随沟道宽长比的增大而增大;当源漏极间电压在一定范围内时,开态电流也随沟道宽长比的增大而增大。
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| 关 键 词： | 沟道宽长比 有机薄膜晶体管 迁移率 阈值电压 |
Study on the Performance of Organic Thin Film Transistors with Different Ratio of Channel Width to Length |
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| YAN Jianfei,WU Zhiming,TAI Huiling,LI Xian,FU Songqi.Study on the Performance of Organic Thin Film Transistors with Different Ratio of Channel Width to Length[J].Semiconductor Optoelectronics,2011,32(1):52-55,108. |
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| Authors: | YAN Jianfei WU Zhiming TAI Huiling LI Xian FU Songqi |
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| Affiliation: | YAN Jianfei,WU Zhiming,TAI Huiling,LI Xian,FU Songqi (State Key Laboratory of Electronic Thin Films and Integrated Devices,School of Optoelectronic Information,University of Electronic Science and Technology of China,Chengdu 610054,CHN) |
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| Abstract: | Three kinds of organic thin films transistors(OTFT) with different ratio of channel width to length were fabricated by using copper phthalocyanine and silicon dioxide as the active layer and the insulating layer,respectively,and titanium/aurum as the electrode.The electrical properties of the three devices were compared and the effects of the ratio of channel width to length on the electrical performance were analyzed.The results show that the ratio of channel width to length has little effect on mobility,a... |
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| Keywords: | ratio of channel width to length OTFT mobility threshold voltage |
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