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具有SiO2/SiNX/SiO2 复合绝缘层的有机薄膜晶体管
引用本文:刘向,刘惠.具有SiO2/SiNX/SiO2 复合绝缘层的有机薄膜晶体管[J].半导体学报,2011,32(3):034003-3.
作者姓名:刘向  刘惠
作者单位:School of Materials Science and Engineering;Dalian Jiaotong University;School of Electronic and Information Engineering;Dalian University of Technology;
基金项目:Project supported by the Projects of Liaoning Province,China(No.2007220040); the National Natural Science Foundation of China (No.60477014)
摘    要:We have investigated a SiO_2/SiN_x/SiO_2 composite insulation layer structured gate dielectric for an organic thin film transistor(OTFT) with the purpose of improving the performance of the SiO_2 gate insulator. The SiO_2/SiN_x/SiO_2 composite insulation layer was prepared by magnetron sputtering.Compared with the same thickness of a SiO_2 insulation layer device,the SiO_2/SiN_x/SiO_2 composite insulation layer is an effective method of fabricating OTFT with improved electric characteristics and decrease...

关 键 词:有机薄膜晶体管  复合绝缘层  载流子迁移率
修稿时间:10/8/2010 4:11:13 PM

Organic thin film transistors with a SiO2/SiNx/SiO2 composite insulator layer
Liu Xiang and Liu Hui.Organic thin film transistors with a SiO2/SiNx/SiO2 composite insulator layer[J].Chinese Journal of Semiconductors,2011,32(3):034003-3.
Authors:Liu Xiang and Liu Hui
Affiliation:Liu Xiang~1 and Liu Hui~2,1 School of Materials Science and Engineering,Dalian Jiaotong University,Dalian 116028,China 2 School of Electronic and Information Engineering,Dalian University of Technology,Dalian 116024,China
Abstract:We have investigated a SiO_2/SiN_x/SiO_2 composite insulation layer structured gate dielectric for an organic thin film transistor(OTFT) with the purpose of improving the performance of the SiO_2 gate insulator. The SiO_2/SiN_x/SiO_2 composite insulation layer was prepared by magnetron sputtering.Compared with the same thickness of a SiO_2 insulation layer device,the SiO_2/SiN_x/SiO_2 composite insulation layer is an effective method of fabricating OTFT with improved electric characteristics and decreased l...
Keywords:organic thin film transistor  composite insulation layer  carrier mobility  
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