| MFMIS铁电场效晶体管的制备及存储特性 |
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| 引用本文： | 蔡道林,李平,张树人,翟亚红,阮爱武,刘劲松,欧阳帆,陈彦宇.MFMIS铁电场效晶体管的制备及存储特性[J].压电与声光,2008,30(2):180-182. |
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| 作者姓名： | 蔡道林 李平 张树人 翟亚红 阮爱武 刘劲松 欧阳帆 陈彦宇 |
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| 作者单位： | 电子科技大学,电子薄膜与集成器件国家重点实验室,四川,成都,610054 |
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| 摘 要： | 在磁控溅射法制备Pb(Zr0.52Ti0.48)O3(PZT)铁电薄膜的基础上,结合半导体工艺制备了金属/铁电/金属/绝缘层/Si衬底(MFMIS)结构的铁电场效应晶体管。器件的顺时针电容-电压(C-V)特性曲线和逆时针漏电流-栅电压(Id-Vg)特性曲线表明,n沟道PZT铁电场效应晶体管具有明显的栅极化调制效应和极化存储性能,且在-5~ 5 V的电压下存储窗口为2 V。
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| 关 键 词： | 磁控溅射 MFMIS 铁电场效应晶体管 存储窗口 |
| 文章编号： | 1004-2474(2008)02-0180-03 |
| 修稿时间： | 2006年11月10 |
Fabrication and Memory Characteristics of Ferroelectric Field Effect Transistors with MFMIS Structure |
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| CAI Dao-lin,LI Ping,ZHANG Shu-ren,ZHAI Ya-hong,RUAN Ai-wu,LIU Jing-song,OU Yang-fan,CHEN Yan-yu.Fabrication and Memory Characteristics of Ferroelectric Field Effect Transistors with MFMIS Structure[J].Piezoelectrics & Acoustooptics,2008,30(2):180-182. |
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| Authors: | CAI Dao-lin LI Ping ZHANG Shu-ren ZHAI Ya-hong RUAN Ai-wu LIU Jing-song OU Yang-fan CHEN Yan-yu |
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| Abstract: | The Metal/Ferroelectric/Metal/Insulator/Si substrates(MFMIS) field-effect-transistors(FFETs) were fabricated using the Pb(Zr0.52Ti0.48)O3(PZT) thin film on p-Si substrates prepared by RF magnetron sputtering technique integrated with semiconductor technology.The clockwise capacitance-voltage(C-V) and the counterclockwise drain current-gate voltage(Id-Vg) hysterisis loop of the n channel PZT FFETs demonstrate that the channel current is modulated by the ferroelectric polarization of PZT films,and FFETs can realize a memory effect due to the ferroelectric polarization of PZT films.Memory widow of the FFETs is 2 V for a voltage swing between-5~ 5 V. |
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| Keywords: | RF magnetron sputtering MFMIS field-effect-transistors memory window |
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