InP MESFET with In0.53Ga0.47As/InP heterostructure contacts |
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| Authors: | Ishibashi T. |
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| Affiliation: | NTT, Musashino Electrical Communication Laboratory, Musashino, Japan; |
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| Abstract: | Source and drain contacts for an InP MESFET were prepared by an Au/Ni/In0.53Ga0.47As/InP layered structure, without a metal alloying process. A highly conductive In0.53Ga0.47As layer grown on an InP active layer reduced the gate-source resistance. A maximum DC transconductance of 16 mS has been obtained for an InP MESFET with 1.2×190 ?m gate dimensions and a pinch-off voltage of ?0.7 V. |
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