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Enhanced reliability for low-temperature gate dielectric of MOS devices by N2O or NO plasma nitridation |
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| Authors: | David C. T. Or P. T. Lai J. K. O. Sin P. C. K. Kwok J. P. Xu |
| Affiliation: | a Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong b Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong c School of Science and Technology, Open University of Hong Kong, Homantin, Hong Kong d Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, People’s Republic of China |
| Abstract: | Silicon MOS capacitors fabricated solely by low-temperature processes (under 600 °C) are treated with nitridation using N2O or NO plasma. Their properties are investigated at room temperature under high-field stress. It is found that both kinds of plasmas are effective in improving the gate-oxide hardness against stress-induced damage, which is characterized by a smaller shift in flatband voltage and smaller increase in interface states after the stress. Moreover, NO-nitrided device shows better performance than N2O-nitrided one. These results show that plasma nitridation has positive effects on the reliability of low-temperature-fabricated devices, which play an important role in flat-panel display systems on glass. |
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