Influence of the configuration of the magnetic field of an ion diode on the parameters of an ion beam |
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Authors: | A. V. Stepanov G. E. Remnev |
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Affiliation: | (1) High-Voltage Research Institute, Tomsk Polytechnic University, pr. Lenina 2a, Tomsk, 634050, Russia |
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Abstract: | The distribution of magnetic-field induction in the accelerating gap of an ion diode with external magnetic insulation is studied. The absence of a device for preliminary plasma production is a distinguishing feature of this diode. It is shown that a certain configuration of the magnetic field near the anode surface allows an increase in the ion-diode efficiency to 70%, and the ion-current density at the diode focus then reaches 350 A/cm2. |
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