| 空穴注入层对OLED性能的影响 |
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| 引用本文： | 张方辉,李欣,王秀峰.空穴注入层对OLED性能的影响[J].西北轻工业学院学报,2007,25(6):7-9,13. |
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| 作者姓名： | 张方辉 李欣 王秀峰 |
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| 作者单位： | 陕西省平板显示技术研究中心,陕西科技大学电气与信息工程学院,陕西西安710021 |
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| 基金项目： | 陕西省专利产业化项目;陕西省教育厅资助项目 |
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| 摘 要： | 通过实验研究了不同种类的空穴注入层材料对有机电致发光器件（OLED）性能的影响，将酞菁铜（CuPc）、2T-NaTa和TcTa分别作为空穴注入层材料制备了3种器件，然后测试器件的电流-电压特性、高度-电压特性及发光效率-电压特性，并进行了对比．结果发现用CuPc、2T-NaTa和TcTa作为空穴传输层的3种器件的流明效率最大值分别为2．94cd／A，2．4cd／A和18cd／A；2T—NaTa作为空穴注入层的器件的启亮电压最低．由此得出结论：在实验研究的3种材料中，2T—NaTa最适合作为空穴传输层．
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| 关 键 词： | 酞氰铜(CuPc) 流明效率 空穴注入层 |
| 文章编号： | 1000-5811（2007）06-0007-03 |
| 收稿时间： | 2007-10-20 |
| 修稿时间： | 2007-10-20 |
INFLUENCE OF ANODE BUFFER LAYER MATERIALSON PERFORMANCE OF OLEDS |
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| ZHANG Fang-hui,LI Xin,WANG Xiu-feng.INFLUENCE OF ANODE BUFFER LAYER MATERIALSON PERFORMANCE OF OLEDS[J].Journal of Northwest University of Light Industry,2007,25(6):7-9,13. |
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| Authors: | ZHANG Fang-hui LI Xin WANG Xiu-feng |
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| Abstract: | In this paper, the influence of different anode buffer layer materials on the performance of OLEDs was studied. Three kinds devices were made with Cupc,2T-Nata and TcTa as buffer layer respectively,and then characteristics of devices were tested, including currentvoltage curve, brightness voltage curve and luminous efficiency-voltage curve. The results was compared,and find that for the device using CuPc, 2T-NaTa and TcTa as buffer layer, the maximum luminous efficiency is 2. 94cd/A, 2. 4cd/A and 18cd/A respectively. The threshold voltage using 2T-NaTa as buffer layer is the lowest among them. It can conlude that 2T-NaTa is most suitable for using as anode buffer layer among these three materials. |
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| Keywords: | 2T-NaTa CuPc luminescent efficiency 2T-NaTa anode buffer layer |
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