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GaAs和GaAs/AlGaAs多层量子阱中载流子的超快动力学(英文)
引用本文:林位株,丘志仁,徐文成,华小明,徐耕,周均铭,黄琦.GaAs和GaAs/AlGaAs多层量子阱中载流子的超快动力学(英文)[J].固体电子学研究与进展,1989(4).
作者姓名:林位株  丘志仁  徐文成  华小明  徐耕  周均铭  黄琦
作者单位:中山大学 (林位株,丘志仁,徐文成,华小明,徐耕),中国科学院物理研究所 (周均铭),中国科学院物理研究所(黄琦)
摘    要:


Ultrafast Carrier Dynamics in Bulk GaAs and GaAs/AlGaAs Multiple Quantum Wells
Abstract:The ultrafast photoexcited carrier dynamics in bulk GaAs and GaAs/ AlGaAs multiple quantum well(MQW)structure has been studied using femtosecond laser pulse pump-probe techniques on the samples grown by MBE. A hot carrier cooling time of 1.5ps in MQW is measured at room temperature. Also, optical phonon emission at 33meV is observed in this sample. These results are found to be similar to that observed in bulk GaAs. A comparison of the hot carrier cooling rates for the two cases suggests that the infra-sub-band optical phonon scattering in MQW may play a dominant role in the cooling of highly excited hot carriers for the narrow wells. The experimental results agree well with that predicted by a simple infinite depth square-well model.
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