| 用于非易失性相变存储器中Si2Sb2Te5在CF4/Ar等离子体下的反应离子刻蚀 |
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| 引用本文： | 李俊焘,刘波,宋志棠,姚栋宁,冯高明,何敖东,彭程,封松林.用于非易失性相变存储器中Si2Sb2Te5在CF4/Ar等离子体下的反应离子刻蚀[J].半导体学报,2013,34(5):056001-5. |
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| 作者姓名： | 李俊焘 刘波 宋志棠 姚栋宁 冯高明 何敖东 彭程 封松林 |
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| 作者单位： | State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences;University of Chinese Academy of Sciences;United Laboratory,Semiconductor Manufacturing International Corporation |
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| 基金项目： | 国家重点基础研究发展计划(2010CB934300, 2011CBA00607, 2011CB9328004), 国家集成电路重大专项（2009ZX02023-003）、中国国家自然科学基金(60906004, 60906003, 61006087, 61076121, 61176122, 61106001), 上海市科委(11DZ2261000, 11QA1407800)资助项目,中国科学院(20110490761) |
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| 摘 要： | Phase change random access memory（PCRAM） is one of the best candidates for next generation nonvolatile memory,and phase change Si2Sb2Te5 material is expected to be a promising material for PCRAM.In the fabrication of phase change random access memories,the etching process is a critical step.In this paper,the etching characteristics of Si2Sb2Te5 films were studied with a CF4/Ar gas mixture using a reactive ion etching system.We observed a monotonic decrease in etch rate with decreasing CF4 concentration,meanwhile,Ar concentration went up and smoother etched surfaces were obtained.It proves that CF4 determines the etch rate while Ar plays an important role in defining the smoothness of the etched surface and sidewall edge acuity.Compared with Ge2Sb2Te5, it is found that Si2Sb2Te5 has a greater etch rate.Etching characteristics of Si2Sb2Te5 as a function of power and pressure were also studied.The smoothest surfaces and most vertical sidewalls were achieved using a CF4/Ar gas mixture ratio of 10/40,a background pressure of 40 mTorr,and power of 200 W.
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| 关 键 词： | reactive ion etching phase-change material Si2Sb2Te5 |
| 收稿时间： | 8/25/2012 3:23:11 PM |
Reactive ion etching of Si2Sb2Te5 in CF4/Ar plasma for a nonvolatile phase-change memory device |
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| Li Juntao,Liu Bo,Song Zhitang,Yao Dongning,Feng Gaoming,He Aodong,Peng Cheng and Feng Songlin.Reactive ion etching of Si2Sb2Te5 in CF4/Ar plasma for a nonvolatile phase-change memory device[J].Chinese Journal of Semiconductors,2013,34(5):056001-5. |
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| Authors: | Li Juntao Liu Bo Song Zhitang Yao Dongning Feng Gaoming He Aodong Peng Cheng and Feng Songlin |
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| Affiliation: | State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;University of Chinese Academy of Sciences, Beijing 100049, China;State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;United Laboratory, Semiconductor Manufacturing International Corporation, Shanghai 201203, China;State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;University of Chinese Academy of Sciences, Beijing 100049, China;State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;University of Chinese Academy of Sciences, Beijing 100049, China;State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China |
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| Abstract: | Phase change random access memory (PCRAM) is one of the best candidates for next generation non-volatile memory, and phase change Si2Sb2Te5 material is expected to be a promising material for PCRAM. In the fabrication of phase change random access memories, the etching process is a critical step. In this paper, the etching characteristics of Si2Sb2Te5 films were studied with a CF4/Ar gas mixture using a reactive ion etching system. We observed a monotonic decrease in etch rate with decreasing CF4 concentration, meanwhile, Ar concentration went up and smoother etched surfaces were obtained. It proves that CF4 determines the etch rate while Ar plays an important role in defining the smoothness of the etched surface and sidewall edge acuity. Compared with Ge2Sb2Te5, it is found that Si2Sb2Te5 has a greater etch rate. Etching characteristics of Si2Sb2Te5 as a function of power and pressure were also studied. The smoothest surfaces and most vertical sidewalls were achieved using a CF4/Ar gas mixture ratio of 10/40, a background pressure of 40 mTorr, and power of 200 W. |
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| Keywords: | reactive ion etching phase-change material Si2Sb2Te5 |
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