| Si_3N_4在BaTiO_3基低阻高性能PTCR陶瓷材料中的作用 |
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| 引用本文： | 吴波,黄松涛,沈化森,沈剑韵,帅世武,胡永海.Si_3N_4在BaTiO_3基低阻高性能PTCR陶瓷材料中的作用[J].电子元件与材料,2000,19(4):15-17. |
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| 作者姓名： | 吴波 黄松涛 沈化森 沈剑韵 帅世武 胡永海 |
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| 作者单位： | 北京有色金属研究总院,北京,100088 |
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| 摘 要： | 要同时保证 PTCR材料和元件具有低室温电阻率和较高的 PTC特性 ,有较大难度。研究了添加 Si3N4作为烧结助剂 ,对 PTCR材料的显微结构和电学性能的影响。同添加 Si O2 作为烧结助剂相比 ,添加 1.0 %的 Si3N4的 PTCR材料更易同时满足低阻高性能要求。
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| 关 键 词： | 电阻率 正电阻温度系数 烧结助剂 氮化硅 |
Effect of Si3N4 on Low Resistivity and High Performance PTC Ceramic Materials Based on BaTiO3 |
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| WU Bo,HUANG Song-tao,SHEN Hua-sen,SHEN Jian-yun,SHUAI Shi-wu,HU Yong-hai.Effect of Si3N4 on Low Resistivity and High Performance PTC Ceramic Materials Based on BaTiO3[J].Electronic Components & Materials,2000,19(4):15-17. |
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| Authors: | WU Bo HUANG Song-tao SHEN Hua-sen SHEN Jian-yun SHUAI Shi-wu HU Yong-hai |
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| Abstract: | A PTC component that possesses low resistivity at room temperature and high PTC characteristic is acquired by using Si 3N 4 as sintering additive. The effect of Si 3N 4 additive on the microstructure and electric properties is studied. The results show that to achieve the above mentioned characters, as sintering additive, Si 3N 4 is more efficient. (7 rtfs.) |
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| Keywords: | resistivity PTCR sintering additive silicon nitride |
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