离子径迹结构对SRAM单粒子翻转截面的影响

本文基于北京HI-13串列加速器的单粒子效应测试终端对0.15 μm工艺的SRAM进行了单粒子效应测试，再次验证了在截面曲线接近饱和区部分，高能离子翻转截面低于低能离子翻转截面的现象。采用Geant4对其进行模拟研究，结果表明，相同LET条件下高能离子可在较远处沉积能量，更易使同一存储单元内相邻的节点共享电荷发生单粒子翻转恢复而减小其单粒子翻转截面，而低能离子进行单粒子效应测试的结果相对保守。

Effect of Ion Track Structure on SRAM SEU Cross Section

The single-event upset (SEU) of SRAM with feature size of 0.15 μm was tested on the single-event effect (SEE) test facility of Beijing HI-13 tandem accelerator, and the results were compared with published test results. It is found that the SEU cross section of the high energy ion is slightly smaller than that of the low energy ion as the cross section is close to saturation cross section. Through calculating with Monte Carlo simulation tool Geant4, it is concluded that the high energy ion deposits more energy at far distance, so it is easier for high energy ion to make the adjacent nodes in same memory share charge and to lead SEU recovery. Then the SEU cross section becomes smaller. The SEE test result of low energy ion is relatively conservative.