Low-temperature sensitive, compressively strained InGaAsP active(λ=0.78-0.85 μm) region diode lasers |
| |
| Authors: | Tansu N. Zhou D. Mawst L.J. |
| |
| Affiliation: | Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI; |
| |
| Abstract: | This letter reports comparative studies between (Al)GaAs versus InGaAsP active region edge-emitting semiconductor lasers for emission wavelength in the IR regime (λ=0.78-0.85 μm). High characteristic temperature T0(200 K) and T1 (450 K) edge-emitting diode lasers have been demonstrated by using the compressively strained (Δa/a=0,6%) Al-free (InGaAsP) active region with an emission wavelength of 0.85 μm. The high T0 and T 1 a result of low active-layer carrier leakage, will be beneficial for high-temperature and high-power operation. Implementation for InGaAsP-active VCSEL's with compressively strained InGaAsP-active layers and conventional DBR's is also discussed |
| |
| Keywords: | |
|
|
