| 半绝缘InP的铁掺杂激活与电学补偿 |
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| 引用本文： | 苗杉杉,赵有文,董志远,邓爱红,杨俊,王博.半绝缘InP的铁掺杂激活与电学补偿[J].半导体学报,2006,27(11):1934-1939. |
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| 作者姓名： | 苗杉杉 赵有文 董志远 邓爱红 杨俊 王博 |
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| 作者单位： | 四川大学物理学院 应用物理系，成都 610065;中国科学院半导体研究所，北京 100083;中国科学院半导体研究所，北京 100083;四川大学物理学院 应用物理系，成都 610065;四川大学物理学院 应用物理系，成都 610065;四川大学物理学院 应用物理系，成都 610065 |
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| 摘 要： | 比较了掺Fe和非掺退火半绝缘(SI)InP材料中Fe杂质的分布,掺杂激活机理以及Fe原子与点缺陷的相互作用.原生掺Fe SI-InP中Fe的替位激活主要通过填隙-跳跃机制,但Fe原子易在位错周围聚集,与空位形成复合体缺陷,占据填隙位等,从而降低Fe的激活效率.在FeP2气氛下退火非掺InP获得的SI-InP材料中,Fe原子的激活主要通过扩散过程的"踢出-替位"机制.退火前材料中存在的In空位使Fe原子通过扩散充分占据In位,同时抑制了材料中深能级缺陷的形成.因此,这种SI-InP材料的Fe激活效率高、电学性能好.
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| 关 键 词： | InP 铁激活 退火 半绝缘 半绝缘 铁掺杂 激活机理 电学补偿 Compensation Electrical Fe Doping 电学性能 深能级缺陷 扩散过程 存在 跳跃机制 效率 体缺陷 空位 聚集 相互作用 点缺陷 原子 分布 |
| 文章编号： | 0253-4177(2006)11-1934-06 |
| 收稿时间： | 03 29 2006 12:00AM |
| 修稿时间： | 05 22 2006 12:00AM |
Activation of Fe Doping and Electrical Compensation in Semi-Insulating InP |
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| Miao Shanshan,Zhao Youwen,Dong Zhiyuan,Deng Aihong,Yang Jun and Wang Bo.Activation of Fe Doping and Electrical Compensation in Semi-Insulating InP[J].Chinese Journal of Semiconductors,2006,27(11):1934-1939. |
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| Authors: | Miao Shanshan Zhao Youwen Dong Zhiyuan Deng Aihong Yang Jun and Wang Bo |
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| Affiliation: | Department of Applied Physics,Faculty of Science,Sichuan University,Chengdu 610065,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Department of Applied Physics,Faculty of Science,Sichuan University,Chengdu 610065,China;Department of Applied Physics,Faculty of Science,Sichuan University,Chengdu 610065,China;Department of Applied Physics,Faculty of Science,Sichuan University,Chengdu 610065,China |
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| Abstract: | The impurity distribution,doping activation mechanism,and interaction between Fe atoms and point defects in Fe-doped and annealed undoped semi-insulating(SI) InP materials are compared.The substitution and activation of Fe occur mostly via an interstitial hopping mechanism in as-grown Fe-doped SI InP.However,Fe atoms aggregate around dislocations and form complex defects with vacancies.The concentration of Fe atoms at interstitial positions is very high,resulting in a low activation efficiency.The activation mechanism of Fe is a kick-out substitution process in SI material obtained by annealing undoped InP in an iron phosphide ambient.Fe atoms nearly completely occupy the indium lattice sites due to the indium vacancy in the material before annealing.The formation of deep level defects is suppressed in the annealing process.This results in high Fe activation efficiency and good electrical properties of the SI-InP material. |
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| Keywords: | InP Fe activation annealing semi-insulating |
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