Equivalent Circuit of the Schottky-Barrier Field-Effect Transistor at Microwave Frequencies (Short Papers)

Johnson's high-frequency representation theory for MOSFET's, experimentally confirmed by Hopkins up to 1 GHz, is extended in this short paper for SBFET's and is found to substantially agree with data for 1-mu m- and 1/2-mu m-gate GaAs SBFET's up to 12 GHz. Regenerative-feedback conductance not accounted for by conventional models is seen to be present in SBFET's at microwave frequencies.