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Growth and luminescent properties of Lu2SiO5 and Lu2SiO5:Ce single crystalline films |
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| Authors: | Yu. Zorenko M. NiklV. Gorbenko V. SavchynT. Voznyak R. KucerkovaO. Sidletskiy B. GrynyovA. Fedorov |
| Affiliation: | a Laboratory of Optoelectronic Materials (LOM), Department of Electronics, Ivan Franko National University of Lviv, Gen. Tarnavskyj str. 107, 70017 Lviv, Ukraine b Institute of Physics, Kazimierz Wielki University in Bydgoszcz, Weyssenhoffa pl., 11, 85-090 Bydgoszcz, Poland c Institute of Physics Academy of Sciences of Czech Republic, 10 Cukrovarnicka str. 10, 162 53 Prague, Czech Republic d Institute for Scintillation Materials, National Academy of Sciences of Ukraine, Lenina pr. 60, 61001 Kharkiv, Ukraine |
| Abstract: | Single crystalline films (SCF) of Lu2SiO5 (LSO) and Lu2SiO5:Ce (LSO:Ce) silicates with thickness of 2.5-15 μm were crystallized by liquid phase epitaxy method onto undoped LSO substrates from melt-solution based on PbO-B2O3 flux. The scintillation and luminescence properties of LSO:Ce SCF were compared with the properties of LSO:Ce single crystal. The peculiarities of luminescence properties of LSO:Ce SCF in comparison with crystal analog can be due to different distribution of Ce3+ over the Lu1 and Lu2 positions of LSO host and are further influenced by Pb2+ flux-originated contamination. |
| Keywords: | Luminescence LuSiO5:Ce Single crystalline films Liquid phase epitaxy |
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