Thin-film reactions during diffusion soldering of Cu/Ti/Si and Au/Cu/Al2O3 with Sn interlayers |
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| Authors: | M. W. Liang T. E. Hsieh S. Y. Chang T. H. Chuang |
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| Affiliation: | (1) Department of Materials Science and Engineering, National Chiao-Tung University, 300 Hsinchu, Taiwan, Republic of China;(2) Institute of Materials Science and Engineering, National Taiwan University, 106 Taipei, Taiwan |
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| Abstract: | The multilayer thin-film systems of Cu/Ti/Si and Au/Cu/Al2O3 were diffusion-soldered at temperatures between 250°C and 400°C by inserting a Sn thin-film interlayer. Experimental results showed that a double layer of intermetallic compounds (IMCs) η-(Cu0.99Au0.01)6Sn5/δ-(Au0.87Cu0.13)Sn was formed at the interface. Kinetics analyses revealed that the growth of intermetallics was diffusion-controlled. The activation energies as calculated from Arrhenius plots of the growth rate constants for (Cu0.99Au0.01)6Sn5 and (Au0.87Cu0.13)Sn are 16.9 kJ/mol and 53.7 kJ/mol, respectively. Finally, a satisfactory tensile strength of 132 kg/cm2 could be attained under the bonding condition of 300°C for 20 min. |
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| Keywords: | Diffusion soldering die attachment intermetallic compounds kinetics analysis bonding strength |
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