High-power broad mesa structure AlGaAs/GaAs single-quantum-well edge-emitting LED

An edge-emitting light-emitting diode (LED) with a wide emitting region for optical sensing and information processing which requires slit-shaped light sources is discussed. Through the use of a high-quantum efficiency single-quantum-well structure grown by molecular beam epitaxy an output power as high as 3 mW at an injected current of 100 mA with a 50- mu m-wide mesa structure is achieved at the 780-nm emission wavelength. A uniform and rectangular intensity profile, which is suitable for practical use, is obtained with a mesa-restricted structure.<>