| High electron mobility of modulation doped GaAs after growing InP by solid source molecular beam epitaxy |
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| 作者姓名： | 舒永春 皮彪 林耀望 邢小东 姚江宏 王占国 许京军 |
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| 作者单位： | Key Laboratory of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics Materials，Ministry of Education，Nankai University，Tianjin 300457，China，Key Laboratory of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics Materials，Ministry of Education，Nankai University，Tianjin 300457，China，Key Laboratory of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics Materials，Ministry of Education，Nankai University，Tianjin 300457，China，Key Laboratory for Semiconductor Materials Science，Chinese Academy of Sciences，Beijing 100083，China，Key Laboratory of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics Materials，Ministry of Education，Nankai University，Tianjin 300457，China，Key Laboratory of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics Materials，Ministry of Education，Nankai University，Tianjin 300457，China，Key Laboratory of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics Materials，Ministry of Education，Nankai University，Tianjin 300457，China，Key Laboratory for Semiconductor Materials Science，Chinese Academy of Sciences，Beijing 100083，China，Key Laboratory of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics Materials，Ministry of Education，Nankai University，Tianjin 300457，China |
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| 摘 要： | 1 INTRODUCTIONModulation doping produced high mobilitytwo dimensional electron gas ( 2DEG) in the Al GaAs/GaAs heterointerface by the physical separa tion of free electrons from positively ionized moth er donors1, 2]. Modulation doped heterostructurehave attracted much interest for high speed de vices3 5], low noise microwave amplifiers6] and formillimeter wave integrated circuits(MMICs)7] be cause of the extremely high mobility of two dimen sional electron…
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| 关 键 词： | 电子迁移率 砷化镓 磷化铟掺杂 晶体生长 固态源分子束 |
High electron mobility of modulation doped GaAs after growing InP by solid source molecular beam epitaxy |
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| SHU Yong-chun,PI Biao,LIN Yao-wang,XING Xiao-dong,Yao Jiang-Hong,WANG Zhan-guo,XU Jing-jun.High electron mobility of modulation doped GaAs after growing InP by solid source molecular beam epitaxy[J].Transactions of Nonferrous Metals Society of China,2005,15(2):332-335. |
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| Authors: | SHU Yong-chun PI Biao LIN Yao-wang XING Xiao-dong Yao Jiang-Hong WANG Zhan-guo XU Jing-jun |
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| Abstract: | Modulation-doped AlGaAs/GaAs structures were grown on GaAs(100) substrate by solid source molecular beam epitaxy (SSMBE) system. The factors which influence the electron mobility were investigated. After growing InP based materials, growth conditions were deteriorated, but by an appropriate method and using reasonaand growth conditions have been studied and optimized via Hall measurements. For a typical sample, 2.0 K electron served. |
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| Keywords: | modulation doped GaAs high electron mobility quantum Hall oscillation |
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