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| 微硅高g加速度传感器工艺研究 | |
| 引用本文： | 张中平. 微硅高g加速度传感器工艺研究[J]. 仪表技术与传感器, 2002, 0(4): 1-3 |
| 作者姓名： | 张中平 |
| 作者单位： | 东南大学微电子中心,南京市,210096 |
| 摘 要： | 主要介绍在制作一种压阻式微硅高g(g＝9．8m/s^2，微重力加速度值）加速度传感器的过程中，所遇到的工艺问题有其解决方法。并较详细地叙述了涉及到的键合（SDB）、双面光刻及传感器几何图形的精确控制等关键技术。 |
| 关 键 词： | 高g加速度计 光刻 腐蚀 键合 微硅高g加速度传感器 |
| 修稿时间： | 2001-09-23 |
Research of Technology for a Micro Piezoresistive High - g Acceleration Sensor |
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| Zhang Zhongping Microelectronics Center,Southeast University,Nanjing. Research of Technology for a Micro Piezoresistive High - g Acceleration Sensor[J]. Instrument Technique and Sensor, 2002, 0(4): 1-3 | |
| Authors: | Zhang Zhongping Microelectronics Center Southeast University Nanjing |
| Affiliation: | Zhang Zhongping Microelectronics Center,Southeast University,Nanjing 210096 |
| Abstract: | Technology problems and their solutions during making a kind of micro piezoresistive high-g acceleration sensor are presented. The key techniques including SDB, double-side lithography and the control of the geometric patterns of the sensor are also introduced in detail. |
| Keywords: | High-g Accelerometer Lithography Etching Silicon Direct Bonding |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ | |