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GaAs超高速电压比较器及利用低温MBE GaAs缓冲层的改进设计
引用本文:李瑞钢,綦素琴,王占国. GaAs超高速电压比较器及利用低温MBE GaAs缓冲层的改进设计[J]. 固体电子学研究与进展, 1994, 0(1)
作者姓名:李瑞钢  綦素琴  王占国
作者单位:中国科学院半导体研究所,半导体材料科学实验室,河北半导体研究所,砷化镓超高速集成电路研究室
摘    要:简要介绍了GaAs超高速电压比较器的国内外发展水平。设计并研制了具有1.0GHz时钟频率的高性能电压比较器。该器件采用亚微米GaAsMESFET工艺技术,其电压分辨率高达11.3mV,功耗仅为274mw。最后给出了利用低温分子束外延生长GaAs作缓冲层的进一步改进设计。

关 键 词:GaAs,比较器,低温分子束外延

GaAs Very High Speed Voltage Comparator and a New Design by Means of LT MBE GaAs Buffer Layer
Li Ruigang, Qi Suqin, Wang Zhanguo. GaAs Very High Speed Voltage Comparator and a New Design by Means of LT MBE GaAs Buffer Layer[J]. Research & Progress of Solid State Electronics, 1994, 0(1)
Authors:Li Ruigang   Qi Suqin   Wang Zhanguo
Abstract:The paper presents breifly the current development of the techniquefor GaAs very high speed voltage comparator. The submicrometer GaAs MESFETprocessing technique is employed. The high performance device has sampling-holding frequence of 1. 0 GHz,power dissipation of 274 mW and voltage resolution of 11. 3 mV. A new design for the circuit by means of a buffer layer grown by low temperature molecular beam epitaxy GaAs(LT MBE GaAs) is given in the end.
Keywords:GaAs  Comparator   LT MBE GaAs
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