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Performance enhancement of GaN SB-MOSFET on Si substrate using two-step growth method |
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| Authors: | Dong-Seok KimTae-Hyeon Kim Chul-Ho WonHee-Sung Kang Ki-Won KimKi-Sik Im Yong Soo LeeSung-Ho Hahm Jung-Hee Lee Jae-Hoon LeeJong-Bong Ha Youngho BaeSorin Cristoloveanu |
| Affiliation: | a School of Electrical Engineering & Computer Science, Kyungpook National University, Daegu 702-701, Republic of Korea b GaN Power Research Group, Samsung LED Co., Ltd., Suwon 443-743, Republic of Korea c Material and Device Research Center, SAIT, Samsung Electronics Co., Ltd., Yongin 446-712, Republic of Korea d Department of Electronics Engineering, Uiduk University, Gyeongju 780-713, Republic of Korea e IMEP, Grenoble Polytechnic Institute, Minatec, Grenoble, France |
| Abstract: | We have grown high quality GaN layers on (1 1 1)-oriented silicon substrate using a two-step growth method and fabricated high-performance normally-off n-channel GaN Schottky-barrier MOSFET (SB-MOSFET). Indium-tin-oxide (ITO) was used as Schottky-barrier contact for source and drain (S/D) because the work function of ITO is close to the electron affinity of GaN. Due to enhanced crystalline quality and reduced surface roughness of GaN layer grown by two-step process, the fabricated device exhibited much improved performances: sufficiently high threshold voltage of 3.75 V, subthreshold slope of 171 mV/dec, low specific on-resistance of 9.98 mΩ cm2, and very high field-effect mobility of 271 cm2/V s. This is the highest mobility value among the GaN MOSFETs ever reported so far. |
| Keywords: | Normally-off GaN SB-MOSFET Two-step growth MOCVD ITO Si(1 1 1) |
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