Development of interference lithography for 22 nm node and below |
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Authors: | Yasuyuki Fukushima Yuya YamaguchiTakafumi Iguchi Takuro UrayamaTetsuo Harada Takeo WatanabeHiroo Kinoshita |
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Affiliation: | University of Hyogo, Laboratory of Advanced Science and Technology for Industry, 1-1-2 Koto Kamigori Ako-gun, Hyogo Pref. 678-1205, Japan |
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Abstract: | An extreme ultraviolet (EUV) interference lithographic exposure tool was installed at the long undulator beamline in NewSUBARU to evaluate EUV resists for 25 nm node and below. The two-window transmission grating of 40 and 50 nm half pitch (hp) were fabricated with techniques of spattering, electron beam lithography, dry etching and wet etching. hp patterns (20 and 25 nm) of chemically amplified resist (CAR) and non-CAR were successfully replicated using the EUV interference lithographic exposure tool. |
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Keywords: | Extreme ultraviolet Interference Transmission grating Undulator Resist |
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