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Controlling of electronic parameters of GaAs Schottky diode by poly(3,4-ethylenedioxithiophene)-block-poly(ethylene glycol) organic interlayer |
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| Authors: | Mehmet Enver Ayd?nMurat Soylu Fahrettin Yakuphanoglu W.A. Farooq |
| Affiliation: | a Dicle University, Faculty of Sciences and Arts, Department of Physics, Diyarbak?r, Turkey b Bingol University, Faculty of Sciences and Arts, Department of Physics, Bingol, Turkey c Metallurgical and Materials Engineering Department, Firat University, Elazig, Turkey d Department of Physics, College of Science, King Saud University, Riyadh, Saudi Arabia |
| Abstract: | The electronic properties of metal-organic semiconductor-inorganic semiconductor structure between GaAs and poly(3,4-ethylenedioxithiophene)-block-poly(ethylene glycol) organic film have been investigated via current-voltage and capacitance-voltage methods. The Au/PEDOT/n-GaAs contact exhibits a rectification behavior with the barrier height of 0.69 eV and ideality factor value of 3.94. The barrier height of the studied diode (0.67 eV) is lower than that of Ni/n-GaAs/In (0.85 eV) and Au/n-GaAs/In Schottky diodes. The decrease in barrier height of Au/n-GaAs/In Schottky diode is likely to be due to the variation in the space charge region in the GaAs. The obtained results indicate that control of the interfacial potential barrier for metal/n-GaAs diode was achieved using thin interlayer of the poly(3,4-ethylenedioxithiophene)-block-poly(ethylene glycol). |
| Keywords: | Organic semiconductor/inorganic semiconductor contacts Hetero-junction Schottky barrier diodes |
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