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Interface control and photovoltaic properties of n-type silicon/metal junction by organic dye |
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| Authors: | F. Yakuphanoglu,Y.S. OcakT. K?l?ç o?lu,W.A. Farooq |
| Affiliation: | a Metallurgical and Materials Engineering Department, Firat University, Elazig, Turkey b Department of Science, Faculty of Education, Dicle University, Diyarbak?r, Turkey c Department of Physics, Faculty of Science, Dicle University, Diyarbak?r, Turkey d Department of Physics, Faculty of Arts and Sciences, Batman University, Batman, Turkey e Department of Physics and Astronomy, College of Science, King Saud University, Riyadh, Saudi Arabia |
| Abstract: | The electronic parameters and photovoltaic properties of the Au/methylene blue/n-Si diodes were investigated by current-voltage and capacitance-conductance-frequency techniques. The diode exhibits a non-ideal behavior due the series resistance, organic layer and oxide layer. The barrier height (1.04 eV) of the Au/methylene blue/n-Si is higher than that of Au/n-Si Schottky diode (0.83 eV) due to an excess barrier formed by organic layer. The interface state density of the diode was determined using a conductance technique and was found to be 3.25 × 1012 eV−1 cm−2. The diode shows a photovoltaic behavior with a maximum open circuit voltage Voc of 0.23 V and short-circuit current Isc of 20.8 μA under 100 mW/cm2. It is evaluated that Au/methylene blue/n-Si is an organic-on-inorganic photodiode with the obtained electronic parameters and methylene blue organic dye controls the interface and electrical properties of conventional metal/n-type silicon junction. |
| Keywords: | Inorganic-organic diode Organic semiconductors Interface state properties |
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