|
|||||
|
|
Low temperature direct imprint of polyhedral oligomeric silsesquioxane (POSS) resist |
|
| Authors: | Nikolaos Kehagias Marc ZelsmannMustapha Chouiki Achille FranconeVincent Reboud Rainer SchoeftnerClivia Sotomayor Torres |
| Affiliation: | a Phononic and Photonic Nanostructures Group, Catalan Institute of Nanotechnology (CIN2-CSIC), Campus Bellaterra - Edifici CM3, 08193-Bellaterra, Barcelona, Spain b LTM-CNRS, CEA-LETI-MINATEC, 17 rue des Martyrs 38000, Grenoble, France c PROFACTOR GmbH, Functional Surfaces and Nanostructures, 4407 Steyr-Gleink, Austria d Catalan Institute for Research and Advanced Studies ICREA, 08010 Barcelona, Spain |
| Abstract: | In this paper we present results on the synthesis of a hybrid organic/inorganic resist based on polyhedral oligomeric silsesquioxane cages and used it in a thermal nanoimprint lithography process. Our resist has been developed in order to be uniformly spin coated on silicon substrates, imprinted at a reduced temperature (40 °C), then cross-linked first at elevated temperatures (>120 °C) during the imprinting process and then by exposure to UV radiation outside the imprinting tool. With this process, a low shrinkage rate of the resist is achieved after cross-linking, combined with high mechanical and thermal properties. |
| Keywords: | Nanoimprint lithography Polyhedral silsesquioxane (POSS) resist |
| 本文献已被 ScienceDirect 等数据库收录！ | |