AlGaN/GaN metal oxide semiconductor heterostructure field effecttransistor |
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Authors: | Khan MA Hu X Sumin G Lunev A Yang J Gaska R Shur MS |
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Affiliation: | Dept. of Electr. & Comput. Eng., South Carolina Univ., Columbia, SC; |
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Abstract: | We report on the AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor (MOS-HFET) and present the results of the comparative studies of this device and a base line AlGaN/GaN heterostructure field effect transistor (HFET). For a 5-μ source-to-drain opening, the maximum current was close to 600 mA/mm for both devices. The gate leakage current for the MOS-HFET was more than six orders of magnitude smaller than for the HFET |
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