射频磁控溅射沉积TiAlN薄膜的电阻率温度系数(英文)

TiAlN薄膜是一种有可能作为喷墨打印头中传统的TaN或TaAl发热电阻的替代品。采用TiN和AlN作靶材,在400°C下用射频磁控溅射共沉积方法在Si(100)基底上制备TiAlN薄膜,研究了磁控溅射沉积时等离子体功率密度对TiAlN薄膜电阻率温度系数和抗氧化性能的影响。结果表明,TiAlN薄膜的结晶度、晶粒尺寸和表面粗糙度随着等离子体功率密度的增加而增大,从而导致大晶粒和小晶界。X射线光电子能谱分析得到的Ti、Al和N的键合能表明,TiAlN中氮素化学计量学亏缺使TiAlN薄膜的电阻更大。在最高等离子体功率密度下制备的TiAlN薄膜具有最高的抗氧化性能和最低的电阻率温度系数(765.43×106K1)。

Temperature coefficient of resistivity of TiAlN films deposited by radio frequency magnetron sputtering

Titanium aluminum nitride (TiAlN) film, as a possible substitute for the conventional tantalum nitride (TaN) or tantalum-aluminum (TaAl) heater resistor in inkjet printheads, was deposited on a Si(100) substrate at 400 °C by radio frequency (RF) magnetron co-sputtering using titanium nitride (TiN) and aluminum nitride (AlN) as ceramic targets. The temperature coefficient of resistivity (TCR) and oxidation resistance, which are the most important properties of a heat resistor, were studied depending on the plasma power density applied during sputtering. With the increasing plasma power density, the crystallinity, grain size and surface roughness of the applied film increased, resulting in less grain boundaries with large grains. The Ti, Al and N binding energies obtained from X-ray photoelectron spectroscopy analysis disclosed the nitrogen deficit in the TiAlN stoichiometry that makes the films more electrically resistive. The highest oxidation resistance and the lowest TCR of ?765.43 × 10^?6 K^?1 were obtained by applying the highest plasma power density.