Poly(3-octylthiophene) as semiconductor for schottky barrier: Effects of doping and storage time

Schottky diodes of aluminium/poly(3-octylthiophene)(P30T)/indium-tin oxide with large active area are prepared by using the proposed new casting technique. Their rectifying behavior and junction characteristics are dependent on whether the P30T is doped and on the storage time, but independent of the thickness of the P30T layer. The present technique can also be applied in a fabrication of electronic devices with other soluble conjugated polymers.