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Submicron patterns in substituted polystyrene resists by focused-ion-beam lithography |
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| Authors: | R. G. Brault R. L. Kubena J. E. Jensen |
| Abstract: | Submicron lines in negative working, substituted polystyrene resists by focused-ion-beam lithography were demonstrated. These features were transferred into an underlying molybdenum layer by plasma etching using the resist as an etch mask, with the minimum continuous line having a width of 0.20 μm. |
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