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Electron beam lithography of copolymeric resists containing styrenes and allyl acrylates
Authors:Jing Shu  Wei Lee  Larry Venable  Gil Varnell
Abstract:A series of electron beam sensitive negative resists based on styrene allyl methacrylate copolymers and substitutional modifications thereof were prepared and their resist characteristics were investigated. Depending on the molecular parameters, such as monomeric ratios, molecular weights and molecular weight distributions, the sensitivity to electron beam irradiation of the copolymer resist can vary from 10?7 μC/cm2 to 10?6 μC/cm2. A styrene allyl methacrylate copolymer having a 57/43 mol-percent and a molecular weight of 3.3 × 105 shows a sensitivity of 1.4 μC/cm2 (Dg0.5) and a resolution of 1.10 μm line/space at 6000A remaining thickness.
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