| 14.5～15GHz11W内匹配功率器件 |
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| 引用本文： | 康建磊,杨克武,吴洪江,吴阿慧.14.5～15GHz11W内匹配功率器件[J].半导体技术,2011,36(3):190-193. |
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| 作者姓名： | 康建磊 杨克武 吴洪江 吴阿慧 |
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| 作者单位： | 河北工业大学信息工程学院,天津,300130;河北工业大学信息工程学院,天津,300130;中国电子科技集团公司第十三研究所,石家庄,050051;中国电子科技集团公司第十三研究所,石家庄,050051 |
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| 摘 要： | 介绍了一种采用GaAs PHEMT管芯设计的超高频内匹配功率器件。为了在更高的频率获得较高的输出功率,采用0.25μm栅长的PHEMT工艺,制作了总栅宽19.2 mm的大功率管芯。采用频带较宽的微带渐变传输线和T型网络共同组成栅极和漏极的匹配电路,并对封装管壳进行优化,有效提高了器件的微波特性。在带内频率14.5～15 GHz、漏源电压Vds为8 V时,器件输出功率大于40.4 dBm(11 W),线性功率增益为7 dB,功率附加效率大于23%。
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| 关 键 词： | GaAs PHEMT 内匹配 高频器件 输入阻抗 输出阻抗 |
14.5-15 GHz 11 W Internally-Matched Power Devices |
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| Kang Jianlei,Yang Kewu,Wu Hongjiang,Wu Ahui.14.5-15 GHz 11 W Internally-Matched Power Devices[J].Semiconductor Technology,2011,36(3):190-193. |
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| Authors: | Kang Jianlei Yang Kewu Wu Hongjiang Wu Ahui |
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| Affiliation: | Kang Jianlei1,Yang Kewu1,2,Wu Hongjiang2,Wu Ahui 2(1.School of Information Engineering,Hebei University of Technology,Tianjin 300130,China,2.The 13th Research Institute,CETC,Shijiazhuang 050051,China) |
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| Abstract: | Based on GaAs PHEMT,an ultrahigh frequency internally matched power device was presented.In order to obtain the higher output power in the higher frequency,the device with 19.2 mm gate width was fabricated by 0.25 μm PHEMT process.The microwave performance of the power device was enhanced by combining the improved matching c ircuit which contains the tapered transmission line and T-network with the improved package structure.While the drain supply voltage is 8 V,the device delivers a saturation output power more than 40.4 dBm(11 W),a power gain of 7 dB and a power added efficiency more than 23% at the frequency of 14.5-15 GHz. |
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| Keywords: | GaAs PHEMT |
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