| 快速热退火对多层Ge量子点晶体质量的影响 |
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| 引用本文： | 魏榕山,丁晓琴,何明华.快速热退火对多层Ge量子点晶体质量的影响[J].材料研究学报,2011(3):259-262. |
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| 作者姓名： | 魏榕山 丁晓琴 何明华 |
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| 作者单位： | 福州大学物理与信息工程学院; |
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| 基金项目： | 国家自然科学基金61006003; 福建省自然科学基金2009J05143资助项目~~ |
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| 摘 要： | 使用超高真空化学气相淀积(UHV/CVD)设备在Si衬底上生长多层Ge量子点,用双晶X射线衍射(DCXRD)、拉曼光谱(Raman)等手段表征在不同条件下快速热退火的Ge量子点材料的组分、应力等特性,研究了快速热退火对多层Ge量子点晶体质量的影响.结果表明:随着退火温度的升高,量子点中Ge的组分下降,量子点应变的弛豫程...
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| 关 键 词： | 无机非金属材料 速热退火 Ge量子点 双晶X射线衍射 拉曼光谱 |
Influence of Rapid Thermal Annealing on Ge Quantum Dots Crystal Quality |
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| WEI Rongshan DING Xiaoqin HE Minghua.Influence of Rapid Thermal Annealing on Ge Quantum Dots Crystal Quality[J].Chinese Journal of Materials Research,2011(3):259-262. |
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| Authors: | WEI Rongshan DING Xiaoqin HE Minghua |
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| Affiliation: | WEI Rongshan~(**) DING Xiaoqin HE Minghua (College of Physics and Information Engineering,Fuzhou University,Fuzhou 350108) |
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| Abstract: | Multilayers of Ge quantum dots were grown on Si substrate by UHV/CVD.The Ge composition and strain relaxation in Ge dots by a rapid thermal annealing(RTA) treatment at different conditions were characterized by DCXRD and Raman spectrum,and the influence of rapid thermal annealing on Ge quantum dots crystal quality was investigated.The results show that the Ge composition decreased and strain relaxation in Ge dots increased at higher annealing temperature.The Ge dots were almost completely strain relaxed by ... |
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| Keywords: | inorganic non-metallic materials rapid thermal annealing(RTA) Ge quantum dots DCXRD Raman spectrum |
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