Influence of AIN protective film thickness on the hardness and electrophotographic properties of organic photoconductors |
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| Authors: | X S Miao Y C Chan C K H Wong D P Webb Y W Lam K M Leung D S Chiu |
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| Affiliation: | (1) Department of Electronic Engineering, City University of Hong Kong, Hong Kong;(2) Department of Physics and Materials Science, City University of Hong Kong, Hong Kong |
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| Abstract: | The deposition of a protective film to increase the hardness of an organic photoconductor (OPC) surface is an effective method
to lengthen the lifetime of the OPC. In this work, A1N protective films were deposited onto OPC samples by rf reactive magnetron
sputtering with low substrate temperature. The A1N films were deposited with optimized sputtering conditions and exhibited
very high transmissivity in the visible wavelength range 300-800 nm. The films caused a remarkable increase in the hardness
of the OPC surface, by between 32 and 62%. The acceptance voltage, dark decay rate, photodischarge rate, difference between
the residual potential and the acceptance voltage of the OPC protected by A1N film were improved. These results show A1N is
a suitable protective film for OPC. |
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| Keywords: | A1N film electrophotographic properties microhardness organic photoconductor |
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