Electrical properties changes induced by electron radiation at TiO2/Si interface

TiO₂/Si structures were fabricated by electron beam evaporation, and exposed to electron beam irradiation to investigate their electrical properties using the high frequency capacitance-voltage measurements. It was found that samples annealed in oxygen became more radiation resistant than un-annealed samples, which can be explained by the Ti valence variations induced by radiation. The samples were characterized by X-ray diffraction to show the Ti₂O₃ crystalline phase transformed to anatase-crystalline phase after oxygen annealing.