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Recharging processes, radiation induced strain and changes of OH bands under H ion implantation in Ti doped lithium niobate
Authors:P Kumar  I Bhaumik  AK Karnal  GO Rodrigues  D Kanjilal  R Raman
Affiliation:a Crystal Growth Centre, Anna University, Chennai 600025, Tamil Nadu, India
b LMDD Division, RRCAT, Indore 452013, Madhya Pradesh, India
c Inter-University Accelerator Centre, Aruna Asaf Ali Marg 110067, New Delhi, India
d Solid State Physics Laboratory, Timarpur 110 054, New Delhi, India
Abstract:A systematic analysis of variations in structural and optical characteristics of Z-cut plates of titanium doped congruent lithium niobate single crystals implanted with 120 keV proton beam at various fluences of 1015, 1016 and 1017 protons/cm2 is presented. Through, high resolution X-ray diffraction, atomic force microscopy, Fourier transform infrared and UV-visible-NIR analysis of congruent lithium niobate, the correlation of properties before and after implantation are discussed. HRXRD (0 0 6) reflection by Triple Crystal Mode shows that both tensile and compressive strain peak are produced by the high fluence implantation. A distinct tensile peak was observed from implanted region for a fluence of 1016 protons/cm2. AFM micrographs indicate mountain ridges, bumps and protrusions on target surface on implantation. UV-visible-NIR spectra reveal an increase in charge transfer between Ti3+/Ti4+ and ligand oxygen for implantation with 1015 protons/cm2, while spectra for higher fluence implanted samples show complex absorption band in the region from 380-1100 nm. Variations of OH stretching vibration mode were observed for cLN Pure, cLNT2% virgin, and implanted samples with FTIR spectra. The concentration of OH ion before and after implantation was calculated from integral absorption intensity. The effect of 120 keV proton implantation induced structural, surface and optical studies were correlated.
Keywords:Implantation  Irradiation  Lithium niobate  Ti doped  Recharging process
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