Effect of swift heavy ion irradiation on structural, optical and electrical properties of Cd2SnO4 thin films |
| |
Authors: | R. Kumaravel K. Ramamurthi Indra Sulania K. Asokan |
| |
Affiliation: | a Crystal Growth and Thin Film Laboratory, School of Physics, Bharathidasan University, Tiruchirappalli 620 024, India b Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067, India |
| |
Abstract: | Transparent conducting cadmium stannate thin films were prepared by spray pyrolysis method on Corning substrate at a temperature of 525 °C. The prepared films are irradiated using 120 MeV swift Ag9+ ions for the fluence in the range 1 × 1012 to 1 × 1013 ions cm−2 and the structural, optical and electrical properties were studied. The intensity of the film decreases with increasing ion fluence and amorphization takes place at higher fluence (1 × 1013 ions cm−2). The transmittance of the films decreases with increasing ion fluence and also the band gap value decreases with increasing ion fluence. The resistivity of the film increased from 2.66 × 10−3 Ω cm (pristine) to 5.57 × 10−3 Ω cm for the film irradiated with 1 × 1013 ions cm−2. The mobility of the film decreased from 31 to 12 cm2/V s for the film irradiated with the fluence of 1 × 1013 ions cm−2. |
| |
Keywords: | Cd2SnO4 thin films Ion irradiation X-ray diffraction UV-Vis spectroscopy |
本文献已被 ScienceDirect 等数据库收录! |