Millimeter-wave low-noise high electron mobility transistors

High electron mobility transistors (HEMT's) have been fabricated which demonstrate excellent millimeter-wave performance. A maximum extrinsic transconductance as high as 430 mS/mm, corresponding to an intrinsic transconductance of 580 mS/mm, was observed in these transistors. A unity current gain cutoff frequency fTas high as 80 GHz and a maximum frequency of oscillationf_{max}of 120 GHz were projected for these HEMT's. At 40 GHz, a minimum noise figure of 2.1 dB with an associated gain of 7.0 dB has also been measured. These are the highestf_{T}, f_{max}, and the best noise performance reported to date. The results clearly demonstrate the potential of HEMT's for millimeter-wave low-noise applications.